Plasma emission triggered protection device for protecting against charge-induced damage
US5994742A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1996 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Dec 5, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the instant invention is a charge-induced damage protection device (100 or 500) for protecting a semiconductor device (200) which is formed on a common substrate with the protection device, the protection device comprising: a region in the substrate; and wherein the region is accessible to electromagnetic energy during processing in which charges may collect on conductive material such that the protective device turns on at a lower voltage due to introduction of the electromagnetic energy to the region so as to protect the semiconductor device from the charge-induced damage. Preferably, the protection device is selected from the group consisting of: a diode, a thyristor, a bidirectional thyristor, a bipolar transistor, and a polymer that becomes more conductive upon being illuminated by electromagnetic energy. The protection device of this embodiment may include a layer situated above the substrate, the layer having an opening (102) above the active region such that the electromagnetic energy passes through the opening to the active region. In another embodiment, the protection device would include a layer situated above the substrate, the electromagnetic energy p…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.