Srikanth Krishnan
25Patents
9h-index
26Co-inventors
75Inventor score
Filing activity: Apr 8, 1994 → Nov 19, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6399445B1 | Fabrication technique for controlled incorporation of nitrogen in gate dielectric | Electricity | 32 | Expired |
| US5998299A | Protection structures for the suppression of plasma damage | Electricity | 30 | Expired |
| US6016062A | Process related damage monitor (predator)--systematic variation of antenna parameters to determine charge damage | Electricity | 19 | Expired |
| US5994742A | Plasma emission triggered protection device for protecting against charge-induced damage | Electricity | 17 | Expired |
| US8138829B2 | Segmented power amplifier with varying segment activation | Electricity | 15 | Active |
| US5596207A | Apparatus and method for detecting defects in insulative layers of MOS active devices | Electricity | 14 | Expired |
| US6117745A | Bistable fuse by amorphization of polysilicon | Electricity | 13 | Expired |
| US7212023B2 | System and method for accurate negative bias temperature instability characterization | Physics | 9 | Expired |
| US5739052A | Apparatus and method for detecting defects in insulative layers of MOS active devices | Electricity | 9 | Expired |
| US6396075B1 | Transient fuse for change-induced damage detection | Electricity | 8 | Expired |
| US7808266B2 | Method and apparatus for evaluating the effects of stress on an RF oscillator | Physics | 7 | Active |
| US7218132B2 | System and method for accurate negative bias temperature instability characterization | Physics | 6 | Expired |
| US8219953B2 | Budgeting electromigration-related reliability among metal paths in the design of a circuit | Physics | 6 | Active |
| US7974595B2 | Methodology for assessing degradation due to radio frequency excitation of transistors | Physics | 4 | Active |
| US9476933B2 | Apparatus and methods for qualifying HEMT FET devices | Electricity | 3 | Active |
| US6586267B2 | Transient fuse for charge-induced damage detection | Electricity | 2 | Expired |
| US6962883B2 | Integrated circuit insulator and method | Electricity | 2 | Expired |
| US7122466B2 | Two step semiconductor manufacturing process for copper interconnects | Electricity | 2 | Expired |
| US7031163B2 | Mechanical cooling fin for interconnects | Electricity | 1 | Expired |
| US7750400B2 | Integrated circuit modeling, design, and fabrication based on degradation mechanisms | Electricity | 1 | Active |
| US7638412B2 | Method and system for reducing charge damage in silicon-on-insulator technology | Electricity | 0 | Active |
| US6969902B2 | Integrated circuit having antenna proximity lines coupled to the semiconductor substrate contacts | Electricity | 0 | Expired |
| US6770937B1 | Photoconductive thin film for reduction of plasma damage | Electricity | 0 | Expired |
| US7262468B2 | Method and system for reducing charge damage in silicon-on-insulator technology | Electricity | 0 | Expired |
| US7071092B2 | Method of manufacturing antenna proximity lines | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.