Infrared light sources with semimetal electron injection
US5995529A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1997 |
| Grant date | Nov 30, 1999 |
| Priority date | — |
| Expiry date | Apr 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.