Process for setting a working rate distribution in an etching or plasma CVD apparatus
US5997686A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1996 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Nov 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process and apparatus for setting a working rate distribution along a work surface which is being AC plasma-enhanced reactively coated, or reactively or non-reactively etched in an AC plasma, and in which process a plasma volume of given volume is utilized, comprises placing the work surface in the plasma volume, positioning a setting surface of a distribution setting body opposite the work surface, the setting body being surrounded by the plasma volume substantially on all sides of the setting body, and setting the working rate distribution by selecting either the material of the setting surface, the quality of the setting surface, a distance relationship between the setting surface and the work surface, or the shape of the setting surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.