Synthesis of W-Si-N films by chemical vapor deposition using WF.sub.6, SiH.sub.4 and NH.sub.3
US5997949A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 20, 1996 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Sep 20, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. The present invention method will allow the conformal forming of amorphous or near-amorphous, ternary films of W-Si-N on patterned non-planar substrates at temperatures at or below about 450.degree. C., by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. A typical temperature range for the formation of the films is between 473.degree. K. and 773.degree. K., while the reactor pressure can be varied between 0.1 to 50 Torr. The composition of the deposited films is adjusted by varying the flow ratios of the reactive gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.