Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same
US5998043A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Jan 31, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12576
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000.degree. C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire matallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.