Method for creating a conductive connection between at least two zones of a first conductivity type
US5998254A · kind A · utility
7Cited by
2References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 6, 1998 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Apr 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method sequence results in a conductive connection between two zones of a first conductivity type. In particular, one of the zones is a source/drain zone of a transistor. Instead of the conventional additional nitride layer, the connection is produced by implanting directly into the third insulation layer, which is present anyway, and by utilizing the fact that the third insulation layer forms the lateral spacers on the gatestack disposed on the region of the second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.