Manufacturing method of semiconductor device with a groove
US5998268A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Sep 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
On the surface of a semiconductor substrate there are formed a silicon oxide film, silicon nitride film and resist, whereby a groove is formed in the semiconductor substrate through an opening portion by chemical dry etching. An oxide film is formed on the inner surface of the groove by wet oxidation and, further, this oxide film is removed by wet etching, after which the surface of the semiconductor substrate located on the outer-peripheral side of the groove from an angular portion defined between a side surface of the groove and the surface of the semiconductor substrate is exposed. Then, the inner surface of the groove and the exposed surface of the semiconductor substrate are oxidized to thereby form a LOCOS oxide film, and thereafter this LOCOS oxide film is removed. As a result of this, the angular portion is made round, thereby enabling the avoidance of the concentration of an electric field on the angular portion of the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.