Protection structures for the suppression of plasma damage
US5998299A · kind A · utility
30Cited by
4References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 9, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Dec 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Protection structures for suppressing plasma damage. Plasma damage is shown to occur primarily during a metal clear portion of a metal etch as opposed to also occurring during the overetch portion of the etch. The protection structures (202) provide a temporary connection between the metal layer (210) being etched and the substrate or a protection device during the clear portion of the etch. This temporary connection (202) is removed as the metal (210) is cleared.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.