Liquid phase deposition method for growing silicon dioxide film on III-V semiconductor substrate treated with ammonium hydroxide
US5998304A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Sep 2, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A liquid phase deposition method involves the use of a supersaturated hydrofluosilicic acid aqueous solution for growing a silicon dioxide film at low temperature (30.degree. C.-50.degree. C.) on a III-V semiconductor, such as a gallium arsenide substrate. The silicon dioxide film may be used in a bipolar transistor or as a field oxide of MOS (metal oxide semiconductor). The III-V semiconductor substrate is chemically treated with an alkaline aqueous solution such as ammonium hydroxide so that the surface of the III-V semiconductor substrate is modified to facilitate the growth of the silicon dioxide film by liquid phase deposition. The growth rate of the silicon dioxide film is as fast as 1265 .ANG./hr. The silicon dioxide film has a refractive index ranging between 1.372 and 1.41.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.