Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer
US5998810A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Nov 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.