Semiconductor device having nitrogen introduced in its polysilicon gate
US5998828A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1997 |
| Grant date | Dec 7, 1999 |
| Priority date | — |
| Expiry date | Oct 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device and a method of manufacturing the same according to the present invention, a trade-off relationship between threshold values and a diffusion layer leakage is eliminated and it is not necessary to form gate oxide films at more than one stages. Since doses of nitrogen are different from each other between gate electrodes (4A to 4C) of N-channel type MOS transistors (T41 to T43), concentrations of nitrogen in the nitrogen-introduced regions (N1 to N3) are accordingly different from each other. Concentrations of nitrogen in the gate electrodes are progressively lower in the order of expected higher threshold values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.