Shigenobu Maeda
211Patents
26h-index
141Co-inventors
93Inventor score
Filing activity: Oct 28, 1993 → Mar 5, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5627390A | Semiconductor device with columns | Electricity | 128 | Expired |
| US6551866B1 | Method of manufacturing a semiconductor memory device | Electricity | 118 | Expired |
| US6359804B2 | Static semiconductor memory cell formed in an n-well and p-well | Emerging Cross-Sectional Technologies | 111 | Expired |
| US5994735A | Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof | Electricity | 105 | Expired |
| US5780888A | Semiconductor device with storage node | Electricity | 73 | Expired |
| US6173235A | Method of estimating lifetime of floating SOI-MOSFET | Physics | 71 | Expired |
| US6870226B2 | Semiconductor device and method of manufacturing same | Electricity | 61 | Expired |
| US6144072A | Semiconductor device formed on insulating layer and method of manufacturing the same | Electricity | 59 | Expired |
| US6150688A | Semiconductor device and method of manufacturing the same | Electricity | 56 | Expired |
| US7541644B2 | Semiconductor device with effective heat-radiation | Electricity | 52 | Expired |
| US6127209A | Semiconductor device and method of manufacturing the same | Electricity | 50 | Expired |
| US6492690B2 | Semiconductor device having control electrodes with different impurity concentrations | Electricity | 45 | Expired |
| US6452249B1 | Inductor with patterned ground shield | Electricity | 44 | Expired |
| US5514880A | Field effect thin-film transistor for an SRAM with reduced standby current | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6420751B1 | Semiconductor device and method of manufacturing the same | Electricity | 42 | Expired |
| US6882006B2 | Semiconductor device and method of manufacturing the same | Electricity | 40 | Expired |
| US6567299B2 | Magnetic memory device and magnetic substrate | Electricity | 39 | Expired |
| US5998828A | Semiconductor device having nitrogen introduced in its polysilicon gate | Electricity | 37 | Expired |
| US6414353B1 | TFT with partially depleted body | Electricity | 33 | Expired |
| US6314021A | Nonvolatile semiconductor memory device and semiconductor integrated circuit | Electricity | 33 | Expired |
| US6255146A | Thin film transistor and a method of manufacturing thereof | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6611041B2 | Inductor with patterned ground shield | Electricity | 30 | Expired |
| US6008077A | Method for fabricating semiconductor device | Electricity | 30 | Expired |
| US6303425A | Semiconductor device and method of manufacturing the same | Electricity | 30 | Expired |
| US5440168A | Thin-film transistor with suppressed off-current and V.sub.th | Electricity | 28 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.