Manufacturing process of strain gauge sensor using the piezoresistive effect
US6001666A · kind A · utility
14Cited by
9References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1997 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Mar 24, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention relates to the manufacture of a strain gauge sensor using the piezoresistive effect, comprising a structure (1) made of a monocrystalline material acting as support to at least one strain gauge (2) made of a semiconducting material with a freely chosen doping type. The strain gauge (2) is an element made along a crystallographic plane determined to improve its piezoresistivity coefficient. The structure (1) is a structure etched along a crystallographic plane determined to improve its etching. The strain gauge (2) is fixed to the structure (1) by bonding means capable of obtaining said sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.