MOSFET device having recessed gate-drain shield and method
US6001710A · kind A · utility
30Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1998 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Mar 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
Abstract
A method of fabricating a MOSFET transistor and resulting structure having a drain-gate feedback capacitance shield formed in a recess between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since one additional non-critical mask is required with selective etch used to create the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.