Szehim Ng
4Patents
4h-index
2Co-inventors
33Inventor score
Filing activity: Mar 30, 1998 → Oct 29, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6222229A | Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability | Electricity | 102 | Expired |
| US6091110A | MOSFET device having recessed gate-drain shield and method | Electricity | 41 | Expired |
| US6001710A | MOSFET device having recessed gate-drain shield and method | Electricity | 30 | Expired |
| US6506648B1 | Method of fabricating a high power RF field effect transistor with reduced hot electron injection and resulting structure | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.