Fabricating method of a metal gate
US6001716A · kind A · utility
24Cited by
1References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 22, 1998 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Jul 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a metal gate includes forming a gate insulating layer on a provided substrate, forming a PVD titanium nitride layer on the gate insulating layer, forming a CVD titanium nitride layer on the PVD titanium nitride layer, and forming a CVD tungsten layer on the CVD titanium nitride layer. The CVD tungsten layer, the CVD titanium nitride layer, and the PVD titanium nitride layer are later patterned to form the metal gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.