Formation method of contact/ through hole
US6001734A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 1997 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Sep 19, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A formation method of a contact/through hole is provided, which is able to form a contact or through hole without raising such problems related to a resist mask. After forming a dielectric layer on a semiconductor substructure having a lower electrical conductor, a metal layer is formed on the dielectric layer. A patterned resist film is formed on the metal layer. Then, the metal layer is selectively etched using a patterned resist film as a mask to transfer the pattern of the resist film to the metal layer, forming a hole pattern to penetrate the metal layer. The patterned resist film is removed from the etched metal layer. The dielectric layer is selectively etched using the etched metal layer as a mask to thereby transfer the hole pattern of the metal layer to the dielectric layer. Thus, a contact/through hole is formed to penetrate the dielectric layer and to extend to the lower electrical conductor. The metal layer serves as a mask having a sufficient etch selectivity for the dielectric layer during the etching step. The metal layer is subject to negligible thickness reduction with respect to its initial thickness due to an etching action.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.