Method of cleaning a surface of a compound semiconductor crystal of group II-VI elements of periodic table
US6001744A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 27, 1997 |
| Grant date | Dec 14, 1999 |
| Priority date | — |
| Expiry date | Aug 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface of a compound semiconductor crystal of Group II-VI elements of Periodic Table can be cleaned to obtain a mirror surface suitable for epitaxial growth, without deteriorating the smoothness of the surface after etching. The feature of a method of cleaning a surface of the compound semiconductor crystal consists in using an etching solution consisting of an aqueous solution of a mixture of sulfuric acid and water in a proportion by volume of 1 to 10 parts of sulfuric acid to 1 part of water, saturated with potassium dichromate, etching the compound semiconductor crystal of Group II-VI elements of Periodic Table with the etching solution at a temperature within a range of 10 to 80.degree. C., and if necessary, washing with water at a temperature of from 10.degree. C. to the boiling point, methanol or isopropyl alcohol, or subjecting to ultrasonic washing or boiling washing in dichloromethane, trichloroethylene or acetone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.