Ferroelectric capacitor and manufacturing the same using bismuth layered oxides
US6004392A · kind A · utility
16Cited by
0References
9Claims
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Key dates
| Filing date | Sep 6, 1996 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Sep 6, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described are a stable semiconductor memory device which is not susceptible to the influence of a heat treatment temperature of a semiconductor substrate of reaction pressure in the CVD method and is free from the reduction in remanence caused by data writing in repetition; and a fabrication process of such a device which comprises forming, by the CVD method, a ferroelectric film containing as a component element bismuth, suing a bismuth alkoxide compound as a raw material, and using the ferroelectric film as a film for the formation of storage capacitance for a semiconductor memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.