Silicon on insulating substrate
US6004406A · kind A · utility
18Cited by
5References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1995 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Jun 14, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first silicon single crystal substrate and a second silicon single crystal substrate are bonded together and the first silicon single crystal substrate is formed thin as an SOI layer. An insulation film is buried in portions of the bonding surface of one of the two silicon single crystal substrates, and in addition, a polycrystal silicon layer is formed on the bonding surface of the silicon single crystal substrate on the side into which the insulation film is buried.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.