Etching parameter control system process
US6004706A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1999 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | May 13, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70641
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.