Radiation sensitive material and method for forming pattern
US6004720A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1997 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Dec 29, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A copolymer expressed by the following structural formula ##STR1## was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm.sup.2. A 0.45 .mu.m-wide L & S was formed at 130 mJ/cm.sup.2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.