Implant enhancement of titanium silicidation
US6004871A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1997 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Jun 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming silicided narrow (i.e., sub-0.25 .mu.m) polysilicon lines. A layer of titanium is deposited over a semiconductor body having polysilicon lines formed thereon Either before or after the titanium deposition and before the react step, an implant is performed using a gas that will not poison the subsequent silicidation reaction. Exemplary gases include the noble element gases such as argon, krypton, xenon, and neon. The titanium is then reacted with the polysilicon lines to form titanium silicide. The gas implant causes the C49 grain size of the titanium silicide to be reduced, which makes the transformation to the C54 phase easier. Finally, an anneal is performed to transform the titanium silicide from the C49 phase to the C54 phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.