Liquid phase deposition method for forming silicon dioxide film on HGCDTE or other II-VI semiconductor substrate
US6004886A · kind A · utility
2Cited by
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15Claims
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Key dates
| Filing date | Oct 30, 1997 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Oct 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/471
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing a silicon dioxide film on a HgCdTe substrate includes a first step in which the HgCdTe substrate is cleaned with an alkaline aqueous solution. The cleaned HgCdTe substrate is then dried before being immersed in a liquid phase deposition solution in which the silicon dioxide film is deposited on the surface of the HgCdTe substrate at the rate as high as 1672 .ANG./hr. The silicon dioxide film has a refraction rate as high as 1.465.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.