Hybrid sensor pixel architecture with linearization circuit
US6005238A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1998 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Apr 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/082
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A pixel circuit construction for image sensing includes a photosensor, an amplifier, a selector switch and, and a reset switch. The amplifier may be a single polycrystalline silicon (channel) transistor for high gain. The selector switch may also be a single polycrystalline silicon (channel) transistor for high conductivity. The reset switch may a single amorphous crystalline silicon (channel) transistor for low leakage current. The photosensor and amplifier may be connected to a shared bias line or may be connected to separate bias and drive lines, respectively. The selector and reset switches may be connected to a shared data line or may be connected to separate data and reset lines, respectively. Laser crystallization and rehydrogenation techniques are well suited to obtaining devices described herein. Linearization of output response is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.