InAs/GaSb superlattice structure infrared detector fabricated by organometallic vapor phase epitaxy
US6005259A · kind A · utility
4Cited by
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Key dates
| Filing date | Sep 23, 1997 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Sep 23, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention concerns an InAs/GaSb superlattice infrared detector that is prepared on a GaSb or a GaAs substrate by low pressure organometaleic chemical vapor deposition. The thickness of well and barrier modulated in the superlattice is used to control the wavelength of absorption. As the superlattice is sandwiched by the Si-doped InAs layer, the wavelength of absorption is in the 8.about.14 .mu.m range. As the superlattice is sandwiched by the Zn-doped GaSb layer, the wavelength of absorption is in the 3.about.5 .mu.m range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.