Semiconductor device and process for production thereof
US6005291A · kind A · utility
23Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1998 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Aug 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, and a titanium nitride film formed on the insulating film. The above titanium film functions as a barrier metal film for barriering the diffusion of fluorine (F) atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.