Inventor · Kure, JP

Kenichi Koyanagi

25Patents
6h-index
29Co-inventors
65Inventor score

Filing activity: Mar 21, 1996 → Feb 10, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US6191002A Method of forming trench isolation structure Electricity 47 Expired
US6033990A Method for manufacturing a multilevel interconnection structure Electricity 28 Expired
US6346302B2 High density plasma enhanced chemical vapor deposition method Electricity 26 Expired
US7256144B2 Method for forming a metal oxide film Electricity 23 Expired
US6005291A Semiconductor device and process for production thereof Electricity 23 Expired
US8880216B2 Picking system Emerging Cross-Sectional Technologies 23 Active
US8574998B2 Leakage reduction in DRAM MIM capacitors Electricity 5 Active
US5891234A Spin on glass material and method for forming a semiconductor device by using improved spin on glass material Chemistry; Metallurgy 5 Expired
US8880217B2 Picking system Physics 5 Active
US7771535B2 Semiconductor manufacturing apparatus Chemistry; Metallurgy 5 Active
US8415227B2 High performance dielectric stack for DRAM capacitor Electricity 4 Active
US6509200B2 Method of appraising a dielectric film, method of calibrating temperature of a heat treatment device, and method of fabricating a semiconductor memory device Electricity 4 Expired
US6187693A Heat treatment of a tantalum oxide film Electricity 4 Expired
US7576016B2 Process for manufacturing semiconductor device Electricity 3 Active
US8476141B2 High performance dielectric stack for DRAM capacitor Electricity 3 Active
US8606400B2 Robot system Emerging Cross-Sectional Technologies 3 Active
US8546236B2 High performance dielectric stack for DRAM capacitor Electricity 3 Active
US7224016B2 Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal film Electricity 2 Expired
US8541283B2 High performance dielectric stack for DRAM capacitor Electricity 2 Active
US9178006B2 Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications Electricity 1 Active
US6939760B2 Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film Electricity 1 Expired
US7741173B2 Method for forming a metal oxide film Electricity 1 Active
US7763500B2 Method for manufacturing semiconductor storage device comprising a slow cooling step Electricity 0 Active
US7303973B2 ALD process for capacitor dielectric Electricity 0 Expired
US8277891B2 Method for suppressing particle generation during semiconductor manufacturing Chemistry; Metallurgy 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.