Method and apparatus for self-aligned memory cells and array using source side injection
US6005807A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 1998 |
| Grant date | Dec 21, 1999 |
| Priority date | — |
| Expiry date | Sep 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6892
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a split gate memory cell using the self-alignment technique to reduce the amount of misalignment is disclosed. The memory cell generally comprises a floating gate for storing a charge, a select gate for selecting one or more memory cell to operate thereon, a control gate, a buried source region and a buried drain region. Due to the structure of the memory cell, there is no read disturbance when reading the memory cell and its low voltage requirement makes it suitable for low voltage applications. When placed in a memory array, each of the memory cells in the array can be individually programmed or read. In performing the erase operation, a column of information is erased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.