Method for fabricating semiconductor device
US6008077A · kind A · utility
30Cited by
8References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 26, 1998 |
| Grant date | Dec 28, 1999 |
| Priority date | — |
| Expiry date | Feb 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
For a semiconductor device having a silicide protection film, provided is a semiconductor device fabrication method which prevents problems caused by overetching when forming the silicide protection film. A silicon oxide film (8) is formed all over the surface in a protection region (PR) and in an ordinary region (OR). Then N-type impurities are introduced by an ion implantation from above the silicon oxide film (8) through the silicon oxide film (8) to form a source/drain region (7) in a self-aligned manner in the surface of an SOI layer (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.