Method for forming a thin semiconductor film and a plasma CVD apparatus to be used in the method
US6009828A · kind A · utility
14Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 1997 |
| Grant date | Jan 4, 2000 |
| Priority date | — |
| Expiry date | Jan 10, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.