Method of fabricating a cylindrical capacitor

US6010943A · kind A · utility

Assignee

• United Silicon Incorporated · TW

Inventor

• Kuan-Yang Liao · Taipei, TW

Key dates

• Filing date: Jun 2, 1998
• Grant date: Jan 4, 2000
• Expiry date: Jun 2, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/033

Abstract

A method of fabricating cylindrical capacitors comprising the steps of forming a gate and a source/drain region on a substrate, and then forming an insulating layer over the substrate. Next, a contact opening that exposes one of the source/drain regions is formed in the insulating layer. Subsequently, a first conductive layer is deposited over the insulating layer and into the contact opening, and then the first conductive layer is patterned. Thereafter, a first deep ultra-violet photoresist layer, a hard mask layer and a second deep ultra-violet photoresist layer are sequentially formed over the substrate structure. Next, the second deep ultra-violet photoresist layer is used as a mask to pattern the hard mask layer and the first deep ultra-violet photoresist layer. Ultimately, an opening that exposes a portion of the first conductive layer is formed. Then, the second deep ultra-violet photoresist layer is removed. After that, a silicon layer is formed on the sidewalls of the opening, and then the hard mask layer and the first deep ultra-violet photoresist layer are removed to expose the insulating layer and the silicon layer. The silicon layer and the first conductive layer toget…