Semiconductor device having an ohmic contact and a Schottky contact, with a barrier layer interposed between the ohmic contact and the Schottky contact

US6011281A · kind A · utility

Assignee

• Fujitsu Quantum Devices Limited · JP

Inventors

• Mitsuji Nunokawa · Yamanashi, JP
• Yutaka Sato · Hitachinaka, JP

Key dates

• Filing date: Dec 2, 1998
• Grant date: Jan 4, 2000
• Expiry date: Dec 2, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A semiconductor device includes an ohmic electrode and a Schottky electrode respectively carrying interconnection patterns with intervening adhesion layer and a diffusion barrier layer, wherein the Schottky electrode further includes a metal layer that prevents a reaction between the Schottky electrode and the diffusion barrier layer such that the metal layer is interposed between the top surface of the Schottky electrode and adhesion layer for increasing the distance between the diffusion barrier layer and the Schottky electrode.