Fujitsu Quantum Devices Limited
117Patents
6Active
117Granted
40Portfolio score
Filing activity: Feb 4, 1993 → Jan 6, 2011 · 6 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6903402B2 | Interdigital capacitor having a cutting target portion | Electricity | 96 | Expired |
| US6949811B2 | Device having interdigital capacitor | Electricity | 92 | Expired |
| US6788521B2 | Capacitor and method for fabricating the same | Electricity | 88 | Expired |
| US6448583B1 | Optical semiconductor module, its manufacture, reflection film, its manufacture, and laser and optical devices using reflection film | Electricity | 44 | Expired |
| US6586813B2 | High-speed compound semiconductor device operable at large output power with minimum leakage current | Electricity | 35 | Expired |
| US6037245A | High-speed semiconductor device having a dual-layer gate structure and a fabrication process thereof | Electricity | 34 | Expired |
| US6900482B2 | Semiconductor device having divided active regions with comb-teeth electrodes thereon | Electricity | 33 | Expired |
| US6331799A | Bias circuit for control input of power transistor | Electricity | 30 | Expired |
| US6011281A | Semiconductor device having an ohmic contact and a Schottky contact, with a barrier layer interposed between the ohmic contact and the Schottky contact | Electricity | 29 | Expired |
| US6274893A | Compound semiconductor device and method of manufacturing the same | Electricity | 27 | Expired |
| US6930334B2 | High frequency semiconductor device | Electricity | 22 | Expired |
| US6504189B1 | Semiconductor device having a microstrip line | Electricity | 21 | Expired |
| US6664624B2 | Semiconductor device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6566954B2 | High frequency amplifier bias circuit, high frequency power amplifier, and communication device | Electricity | 20 | Expired |
| US6690237B2 | High frequency power amplifier, and communication apparatus | Electricity | 18 | Expired |
| US6710378B1 | Semiconductor light reception device of end face light incidence type | Electricity | 17 | Expired |
| US6329677A | Field effect transistor | Electricity | 17 | Expired |
| US6693337B2 | Semiconductor photodetection device | Electricity | 15 | Expired |
| US6078071A | High-speed compound semiconductor device having an improved gate structure | Electricity | 15 | Expired |
| US6774484B2 | High frequency semiconductor device | Electricity | 14 | Expired |
| US6316297A | Semiconductor device and method for fabricating the same | Electricity | 14 | Expired |
| US6242766A | High electron mobility transistor | Electricity | 14 | Expired |
| US6489671B2 | Semiconductor integrated circuit having three-dimensional interconnection lines | Electricity | 13 | Expired |
| US6639441B2 | Clock signal correction circuit and semiconductor device implementing the same | Electricity | 12 | Expired |
| US6628176B1 | High-frequency input impedance matching circuit, high-frequency output impedance matching circuit and semiconductor integrated circuit | Electricity | 10 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.