Method for multilevel programming of a nonvolatile memory, and a multilevel nonvolatile memory
US6011715A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1998 |
| Grant date | Jan 4, 2000 |
| Priority date | — |
| Expiry date | Nov 3, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming method for a nonvolatile memory includes the steps of: a) determining a current value of the threshold voltage; b) acquiring a target value of the threshold voltage; c) calculating a first number of gate voltage pulses necessary to take the threshold voltage from the current value to the target value; d) applying a second number of consecutive voltage pulses to the gate terminal of the cell, the second number being correlated to the first number and having a uniformly increasing amplitude; e) then measuring a current value of the threshold voltage; and repeating steps c) to e) until a final threshold value is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.