Apparatus for plasma-supported back etching of a semiconductor wafer
US6013136A · kind A · utility
9Cited by
1References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 2, 1996 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Dec 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the manufacture of highly-integrated circuits on a semiconductor substrate includes applying coatings to front and back sides of a wafer of semiconductor material in at least one deposition process, and subsequently removing the coating on the back of the wafer by etching being carried out with the front of the wafer being free of lacquer. The etching is performed in a process chamber in which reactive particles produced in a plasma only reach the back of the wafer, while advances of the reactive particles toward the front of the wafer are prevented by a protective neutral gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.