Method for fabricating a semiconductor device
US6013544A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1996 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Mar 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed. A crystalline silicon semiconductor film is obtained by introducing catalyst elements for promoting the crystallization into a lower amorphous silicon semiconductor film and then performing a heat treatment onto the lower amorphous silicon semiconductor film. Thereafter, an upper amorphous silicon semiconductor film is formed on the obtained lower crystalline silicon semiconductor film, which is subsequently subjected to a heat treatment so as to obtain an upper crystalline silicon semiconductor film. Then, the upper crystalline silicon semiconductor film is removed. By this process, the catalyst elements remaining in the lower crystalline silicon semiconductor film moves into the upper crystalline silicon semiconductor film. As a result, a concentration of the catalyst elements in the lower crystalline silicon semiconductor film is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.