Semiconductor device having a PMOS device with a source/drain region formed using a heavy atom p-type implant and method of manufacture thereof
US6013546A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1997 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Dec 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is formed which includes a shallow PMOS active region containing a heavy atom p-type dopant material. In an exemplary process for making a PMOS device or portion of a device, at least one PMOS gate electrode is formed over a PMOS device region of a substrate. A PMOS spacer is formed on a sidewall of a PMOS gate electrode. An amorphizing dopant material is selectively implanted into a PMOS active region using the PMOS spacer as a mask. A heavy atom p-type dopant material is selectively implanted into the PMOS active region using the PMOS spacer as a mask. The order of implantation of the amorphizing dopant material and the heavy atom p-type dopant material may be reversed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.