Method for forming field oxide film of semiconductor device
US6013561A · kind A · utility
1Cited by
9References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1997 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Oct 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76205
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a field oxide film of a highly integrated semiconductor device, in which an annealing step is carried out during a field oxide film formation step for growing the field oxide film adapted to isolate elements of the semiconductor device. By the annealing step, it is possible to prevent a stress concentration phenomenon from occurring in a semiconductor substrate on which the field oxide film is formed, thereby reducing or eliminating a field oxide thinning phenomenon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.