Method of selectively depositing a metal film
US6013575A · kind A · utility
48Cited by
9References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 3, 1996 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Jul 3, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of selectively depositing a metal film in an opening of an insulating layer formed on a semiconductor substrate, the opening exposing a surface of at least one of a metal layer, a semiconductor layer, and a semiconductor substrate, the method including the steps of exposing a surface of insulating layer and the substrate surface to a gas plasma which consists of at least one of an inert gas and hydrogen, exposing the insulating layer to a gas containing halogen atoms other than fluorine atoms, and selectively depositing a metal film in the opening of the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.