Method for forming a metal wiring structure of a semiconductor device
US6013578A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 28, 1997 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Feb 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal wiring structure includes a conduction line, an insulator film for electrically insulating the conduction line, and a transmutation layer formed as the density of a portion of the insulator film adjacent to the conduction line is increased or by adding impurities to the insulator film. A metal wiring forming method for a semiconductor device, includes the step of forming a trench in a given portion of a silicon oxidation film formed on a semiconductor substrate, forming a transmutation layer on a surface of the silicon oxidation film, and depositing a conductive material on the transmutation layer to form a conduction line, whereby diffusion of the conductive material is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.