Poly-crystalline silicon film ladder resistor
US6013940A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1995 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | Aug 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A resistor ladder network may be formed with a reduced space on a semiconductor substrate by patterning a plurality of layers of resistive polycrystalline silicon films spaced by insulating layers. Such a device includes a first insulating film formed on a semiconductor substrate, one or more serial-connected first resistors formed in a first polycrystalline silicon film provided on the semiconductor substrate via the first insulating film, a second insulating film provided on the first polycrystalline silicon film, one or more series-connected second resistors formed in a second polycrystalline silicon film provided apart from the first polycrystalline silicon film via the second insulating film, the second polycrystalline silicon film being connected to the first polycrystalline silicon film. A third insulating film is provided over the second polycrystalline silicon film, and metal wires provided on a surface of the second polycrystalline silicon film via contact holes formed in the third insulating film. Preferably, the first polycrystalline silicon film is thicker than the second polycrystalline silicon film, the impurity concentration of the first polycrystalline silicon film…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.