Method for varying x-ray hybrid resist space dimensions
US6014422A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 1998 |
| Grant date | Jan 11, 2000 |
| Priority date | — |
| Expiry date | May 21, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides combining the advantages of hybrid resist with the unique properties of x-ray lithography to form high tolerance devices with x-ray pitch and to provide a means for varying the space width and fine tuning to account for process variations. Accordingly, a space width in the hybrid resist can be selectively printed by varying the mask-wafer gap distance, allowing more versatile structures to be formed and adjustments to be made for process changes such as resist composition and ion implant levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.