Method and system for trapping contaminants formed during chemical vapor deposition processing of semiconductor wafers
US6015463A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 14, 1997 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Feb 14, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4412
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition system is provided. The chemical vapor deposition system is used to deposit an inorganic layer on a silicon wafer. The chemical vapor deposition system includes a reactor chamber, a particle trap, a gate valve, and a vacuum system. The vacuum system forces a gas out of the reactor chamber and through the particle trap and the gate valve. When the gate valve opens and closes, particles inside the valve can contaminate the reactor chamber and the vacuum system. The particle trap has a reservoir in which particles in the gas may become trapped before they reach the gate valve. The particle trap helps prevent the particles from becoming trapped in the gate valve.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.