Method and circuit for generating a gate voltage in non-volatile memory devices
US6016271A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1998 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Aug 27, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit generates a regulated voltage, in particular for gate terminals of non-volatile memory cells of the floating gate type. The circuit includes a generator circuit adapted to generate an unregulated voltage on its output. A comparator circuit is coupled to the output of the generator circuit including a reference element including a non-volatile memory cell of the floating gate type and adapted to output an error signal tied to the difference between the unregulated voltage and the threshold voltage of the cell. A regulator circuit is coupled to the output of the comparator circuit and is operative to regulate the unregulated voltage based on the value of the error signal. The regulated voltage is made programmable and tied to the parameters of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.