Method for biasing semiconductor lasers
US6016326A · kind A · utility
12Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1997 |
| Grant date | Jan 18, 2000 |
| Priority date | — |
| Expiry date | Dec 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/183
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for biasing a semiconductor laser (12) at the threshold level of the semiconductor laser (12). The method includes applying pilot tone signals having the same frequency to a bias current and a drive current of the semiconductor laser (12). A lateral detector (13) generates a photocurrent from spontaneous emissions of the semiconductor laser (12). Further, the method includes biasing the semiconductor laser (12) using a pilot tone signal of the photocurrent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.