Read-only memory device having bit line discharge circuitry and method of reading data from the same
US6018487A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1998 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Dec 17, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A mask ROM of the invention discharges bit lines selectively before a bit line precharge operation in response to an externally applied command. A column decoder selects one of bit lines in response to column select signals. A discharge control circuit generates a first discharge control signal in response to the command. A discharge predecoder generates a plurality of second discharge control signals by logically combining the first discharge control signal with the column select signals. A bit line discharge circuit selectively discharges the bit lines in response to the second discharge control signals. The mask ROM is free from bit line coupling due to the selection of particular memory cells, the cell selection sequence and the programmed states of the selected cells, leading to an improvement in read speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.