June Lee
52Patents
12h-index
24Co-inventors
84Inventor score
Filing activity: Jul 29, 1998 → Nov 20, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6813184B2 | NAND flash memory and method of erasing, programming, and copy-back programming thereof | Physics | 68 | Expired |
| US7064986B2 | Non-volatile semiconductor memory device using differential start programming voltage and programming method thereof | Physics | 47 | Expired |
| US6731540B2 | Non-volatile semiconductor memory device having shared row selection circuit | Physics | 38 | Expired |
| US7042770B2 | Memory devices with page buffer having dual registers and method of using the same | Physics | 37 | Expired |
| US6996014B2 | Memory devices with page buffer having dual registers and method of using the same | Physics | 30 | Expired |
| US5986918A | Synchronous read only memory device | Physics | 29 | Expired |
| US7184308B2 | Flash memory devices and methods for programming the same | Physics | 23 | Expired |
| US6735727B1 | Flash memory device with a novel redundancy selection circuit and method of using the same | Physics | 21 | Expired |
| US6018487A | Read-only memory device having bit line discharge circuitry and method of reading data from the same | Physics | 20 | Expired |
| US6724682B2 | Nonvolatile semiconductor memory device having selective multiple-speed operation mode | Physics | 18 | Expired |
| US10002073B2 | Selective data recycling in non-volatile memory | Physics | 16 | Active |
| US6795366B2 | Internal voltage converter scheme for controlling the power-up slope of internal supply voltage | Physics | 13 | Expired |
| US9653176B2 | Read disturb reclaim policy | Physics | 11 | Active |
| US7596026B2 | Program method of non-volatile memory device | Physics | 10 | Active |
| US7184307B2 | Flash memory device capable of preventing program disturbance according to partial programming | Physics | 10 | Expired |
| US8289802B2 | System and memory for sequential multi-plane page memory operations | Physics | 9 | Active |
| US7539059B2 | Selective bit line precharging in non volatile memory | Physics | 8 | Active |
| US6377486B1 | Block architecture option circuit for nonvolatile semiconductor memory devices | Physics | 7 | Expired |
| US6888756B2 | Low-voltage non-volatile semiconductor memory device | Physics | 6 | Expired |
| US6845041B2 | Non-volatile semiconductor memory device with accelerated column scanning scheme | Physics | 6 | Expired |
| US6958935B2 | Nonvolatile semiconductor memory with X8/X16 operation mode using address control | Physics | 5 | Expired |
| US10347331B2 | Read threshold optimization in flash memories | Physics | 5 | Active |
| US9502127B2 | System optimization in flash memories | Physics | 5 | Active |
| US10456052B2 | Electronic device having segmental portion on housing thereof | Electricity | 4 | Active |
| US7227785B2 | Memory devices with page buffer having dual registers and method of using the same | Physics | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.