Process for forming deep level impurity undoped phosphorous containing semi-insulating epitaxial layers
US6019840A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 1997 |
| Grant date | Feb 1, 2000 |
| Priority date | — |
| Expiry date | Jun 27, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A reduced temperature low pressure metal organic chemical vapor deposition process for the production of semi-insulating deep level impurity undoped Group III-V phosphorous containing epitaxial layers. The present invention achieves production of semi-insulating layers at reduced growth temperatures in the approximate range of 490.degree. C. to 530.degree. C. Semi-insulating resistivities on the order of 10.sup.6 ohm-cm to 10.sup.9 ohm-cm are obtained according to the present process without resort to use of extrinsic dopants such as the transition metals typically used in conventional processes to obtain semi-insulating phosphorous containing layers, and without post processing annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.